Capacitor-based temperature-sensing device

ABSTRACT

A temperature-sensing device configured to monitor a temperature is disclosed. The temperature-sensing device includes: a first capacitor comprising a first oxide layer with a first thickness; a second capacitor comprising a second oxide layer with a second thickness, wherein the second thickness of the second oxide layer is different from the first thickness of the first oxide layer; and a control logic circuit, coupled to the first and second capacitors, and configured to determine whether the monitored temperature is equal to or greater than a threshold temperature based of whether at least one of the first and second oxide layers breaks down.

CROSS-REFERENCE TO RELATION APPLICATION

The present application claims priority to U.S. Provisional PatentApplication No. 62/564,715, filed on Sep. 28, 2017, which isincorporated by reference herein in its entirety.

BACKGROUND

Aggressive technology scaling for high performance integrated circuitshas resulted in higher current densities in interconnection lines anddevices, which in turn increases power dissipation. Generally, asignificant amount of such dissipated power converts to heat, which thuscauses a substantial rise in heat density. Respective differentoperation modes of each of the functional blocks in a high performanceintegrated circuit cause temperature gradients on a respective substratewhere the integrated circuit is formed. The above-mentioned scenarioslead to a need for a lightweight, robust, and power-efficient on-chiptemperature-sensing device that can be used for accurate thermal mappingand thermal management.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure arc best understood from the followingdetailed description when read with the accompanying figures. It isnoted that various features are not necessarily drawn to scale. In fact,the dimensions and geometries of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 illustrates a block diagram of a temperature-sensing device, inaccordance with some embodiments.

FIG. 2 illustrates an exemplary circuit diagram of part of thetemperature-sensing device of FIG. 1, in accordance with someembodiments.

FIG. 3 illustrates a flow chart of an exemplary method to operate thetemperature-sensing device of FIG. 1, in accordance with someembodiments.

FIG. 4 illustrates soft breakdown behaviors of first and second MOScapacitors of the temperature-sensing device of FIG. 1 over variousdifferent temperatures, respectively, in accordance with someembodiments.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

The following disclosure describes various exemplary embodiments forimplementing different features of the subject matter. Specific examplesof components and arrangements are described below to simplify thepresent disclosure. These are, of course, merely examples and are notintended to be limiting. For example, the formation of a first featureover or on a second feature in the description that follows may includeembodiments in which the first and second features are formed in directcontact, and may also include embodiments in which additional featuresmay be formed between the first and second features, such that the firstand second features may not be in direct contact. In addition, thepresent disclosure may repeat reference numerals and/or letters in thevarious examples. This repetition is for the purpose of simplicity andclarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

To accurately monitor temperature of an integrated circuit, a variety ofon-chip temperature-sensing devices have been proposed over the yearssuch as, for example, an on-chip thermal sensor. In general, an on-chipthermal sensor is an integral part of an integrated circuit thatprovides one or more additional layers of protection. The on-chipthermal sensor can be used to detect whether the integrated circuit isbeing hacked, for example, by sensing a presence of an abnormaltemperature. As such, the integrated circuit's security protection canbe improved. The on-chip thermal sensor can also be used to providefeedback to other on-chip circuits/components so as to allow thoseon-chip circuits/components to adjust respective circuit parameter(s) toprevent generating excessive heat. Accordingly, the whole integratedcircuit (system) can operate more efficiently and reliably.

Conventional on-chip thermal sensors typically utilize a variety oftemperature-varying physical parameters (e.g., voltage) todetect/measure temperature. Such conventional thermal sensors aresubjected to a variety of issues when integrated into an integratedcircuit. In an example, one or more diodes (p-n junction devices) areused to measure temperature by comparing respective voltage drops basedon a temperature-varying characteristic of the voltage drop. However,integrating the diodes into an integrated circuit typically encounters avariety of issues, e.g., re-allocation of real estate to accommodate thediode(s) and one or mere reference circuits, high power consumption ofthe diode(s), etc. In another example, a metal-oxide-semiconductor (MOS)transistor is used as an on-chip thermal sensor by using the MOStransistor's temperature-varying threshold voltage. Although suchMOS-based thermal sensors are relatively smaller in size and have lowerpower consumption, integrating the MOS-based thermal sensors into anintegrated circuit still encounters a variety of issues such as, forexample, difficulty in scaling with other on-chip components circuits ofthe integrated circuit, requiring at least one reference circuit, etc.Thus, conventional on-chip thermal sensors are not entirelysatisfactory.

The present disclosure provides various embodiments of atemperature-sensing device, including a plurality ofmetal-oxide-semiconductor (MOS) capacitors, that is configured tomonitor a temperature. In some embodiments, the disclosedtemperature-sensing device may be integrated into a system circuit asystem-on-chip (SoC) circuit, a system-in-package (SiP), etc.) so as tomonitor an on-chip temperature of the system circuit.

According to some embodiments, each of the plurality of MOS capacitorsof the temperature-sensing device includes a respective oxide layerdisposed (e.g., sandwiched) between a metal layer and a semiconductorlayer. More specifically, in some embodiments, the oxide layers of theplurality of MOS capacitors have respective different thicknesses, whichallows the plurality of MOS capacitors to present respective differentoxide breakdown behaviors under respective different temperatures. Insome embodiments, the temperature-sensing device includes a temperatureoutput circuit, coupled to the plurality of MOS capacitors, thatincludes a plurality of comparison circuits. Each comparison circuit iscoupled to a respective MOS capacitor and configured to sense a changeof a current signal flowing through the respective MOS capacitor wheneach respective oxide layer breaks down under a respective temperature.As such, in accordance with some embodiments of the present disclosure,the temperature-sensing device may be used to determine whether amonitored temperature has exceeded one of a plurality of pre-definedtemperatures, which will be discussed in further detail below.

FIG. 1 illustrates a block diagram of a temperature-sensing device 100,in accordance with various embodiments. As mentioned above, thetemperature-sensing device 100 is integrated into a system circuit (notshown), and configured to monitor an on-chip temperature of the systemcircuit. In some embodiments, the temperature-sensing device 100includes a MOS capacitor circuit 102, a temperature output circuit 104,and a control logic circuit 106.

In some embodiments, the MOS capacitor circuit 102 includes a pluralityof MOS capacitors. In some embodiments, each of the plurality of MOScapacitors includes a respective conductive contact (e.g., a metalcontact, a polysilicon contact, or the like), an oxide layer, and asemiconductor substrate, wherein the oxide layer is sandwiched betweenthe metal contact and semiconductor substrate, as discussed in furtherdetail below. Although only the MOS capacitors are described in thefollowing discussion, it is noted that, in some other embodiments, theMOS capacitor circuit 102 can include any of various types of capacitorssuch as, for example, metal-insulator-metal (MIM) capacitors,metal-insulator-semiconductor (MIS) capacitors, while remaining withinthe scope of the present disclosure.

In some embodiments, the respective semiconductor substrates may eachincludes a silicon substrate, or alternatively, include other elementarysemiconductor material (e.g., germanium) and/or a compound semiconductormaterial (e.g., silicon carbide, gallium arsenic, indium arsenide, andindium phosphide). In some embodiments, the semiconductor substrate ofeach MOS capacitor may include an alloy semiconductor material, forexample, silicon germanium, silicon germanium carbide, gallium arsenicphosphide, and gallium indium phosphide.

According to some embodiments of the present disclosure, the oxidelayers of the plurality of MOS capacitors (of the MOS capacitor circuit102) have respective different thicknesses. Such different thicknessescause the oxide layers to present respective different breakdownbehaviors under a varying temperature so as to allow the correspondingMOS capacitors to be conducted differently. In a non-limiting example,when a first oxide layer has a thicker thickness (e.g., about 3.1nanometers (nm)) and a second oxide layer has a thinner thickness (e.g.,about 2.9 nm) and when corresponding first and second MOS capacitors (ofthe MOS capacitor circuit 102) respectively including the first andsecond oxide layers are biased under a same voltage, the first oxidelayer presents a “soft breakdown (SBD)” behavior at a first temperaturesubstantially lower than a second temperature when the second oxidelayer does. As understood by persons of ordinary skill in the art, a MOScapacitor typically presents a SBD behavior when the MOS capacitor ispositively biased (i.e., a positive voltage is applied on the metal endwith respect to the semiconductor end), which effectively presents avoltage-dependent conductive behavior. FIG. 4 illustrates such SBDbehaviors of the first and second MOS capacitors observed over threedifferent temperatures, respectively. As shown, when the first MOScapacitor is positively biased (i.e., when the voltage along the X-axisis larger than 0 V) and at temperature of about 30° C., the first MOScapacitor presents a saturated current density. As the voltagepositively increases at temperature of about 60 and 90° C.,respectively, the respective current densities conducting through thefirst MOS capacitor change along with the voltage, which shows that thefirst MOS capacitor presents the SBD behavior at both 60 and 90° C. Incontrast, the second MOS capacitor does not present the SBD behavioruntil the temperature is elevated to about 90° C. In some embodiments,the first and second temperatures under which the first and second oxidelayers respectively present SBD behaviors are herein referred to as“first breakdown temperature” of the first oxide layer and “secondbreakdown temperature” of the second oxide layer, respectively.

In general, when an oxide layer presents such an SBD behavior under abias voltage and an environmental temperature not lower than arespective breakdown temperature, a “tentative” conduction path isformed within the oxide layer, which causes a corresponding MOScapacitor to become more conductive. The term “tentative” as used hereinrefers to a condition wherein the conduction path may become absentunder at least one of various conditions such as, for example, a change(e.g., a decrease) of the bias voltage and a change (e.g., a decrease)of the environmental temperature.

Continuing with the non-limiting example above, since the first andsecond MOS capacitors become more conductive at respective differenttemperatures (e.g., at respective breakdown temperatures) under the samebias voltage, in some embodiments, the control logic circuit 106 of thedisclosed temperature-sensing device 100 can use such differentconductive behaviors of the MOS capacitors of the MOS capacitor circuit102, in response to the varying environmental temperature, to estimateor determine an instantaneous value of the varying environmentaltemperature.

The temperature output circuit 104 includes a plurality of comparatorcircuits, each of which is coupled to a respective MOS capacitor of theMOS capacitor circuit 102. In some embodiments, the comparator circuitof the temperature output circuit 104, which is discussed further below,is configured to compare a current, flowing through the respective MOScapacitor, with a reference current so as to determine whether therespective MOS capacitor has become more conductive, as mentioned above.

The control logic circuit 106, coupled to the MOS capacitor 102 and thetemperature output circuit 104, is configured to provide theabove-mentioned bias voltage to the MOS capacitors of the MOS capacitorcircuit 102. In some embodiments, the bias voltage may be aninstantaneous one of various bias voltage values varying over time.Alternatively stated, the control logic circuit 106 may graduallyincrease/decrease the bias voltage from a first bias voltage to a secondbias voltage during a pre-defined period of time, and after thepre-defined period of time, decrease/increase (i.e., reverse) the biasvoltage from the second bias voltage to the first bias voltage. As such,within the pre-defined period of time, the MOS capacitors of the MOScapacitor circuit 102 may be applied with a different bias voltage at arespective time.

In some embodiments, the control logic circuit 106 is further configuredto receive plural logic states, respectively determined based on whetherthe MOS capacitors of the MOS capacitor circuit 102 have become moreconductive, from the plurality of comparator circuits of the temperatureoutput circuit 104 so as to estimate the instantaneous value of thevarying environmental temperature, as mentioned above. Operations of thetemperature-sensing device 100 will be discussed in further detailbelow.

FIG. 2 illustrates respective exemplary circuit diagrams of the MOScapacitor circuit 102 and the temperature output circuit 104, inaccordance with various embodiments. It is noted that the circuitdiagrams of the MOS capacitor circuit 102 and the temperature outputcircuit 104 shown in FIG. 2 are simplified for illustration purposes,such that each of the MOS capacitor circuit 102 and the temperatureoutput circuit 104 may include an desired number of MOS capacitors andcomparator circuits while remaining within the scope of the presentdisclosure.

In the illustrated embodiment of FIG. 2, the MOS capacitor circuit 102includes MOS capacitors 202, 204, and 206. As mentioned above, each ofthe MOS capacitors 202, 204, and 206 includes an oxide layer disposedbetween a respective metal contact and semiconductor substrate. Forexample, the MOS capacitor 202 includes metal contact 202-1, oxide layer202-2, and semiconductor substrate 202-3, wherein the oxide layer 202-2is disposed between the metal contact 202-1 and the semiconductorsubstrate 202-3; the MOS capacitor 204 includes metal contact 204-1,oxide layer 204-2, and semiconductor substrate 204-3, wherein the oxidelayer 204-2 is disposed between the metal contact 204-1 and thesemiconductor substrate 204-3; and the MOS capacitor 206 includes metalcontact 206-1, oxide layer 206-2, and semiconductor substrate 206-3,wherein the oxide layer 206-2 is disposed between the metal contact206-1 and the semiconductor substrate 206-3.

According to some embodiments, the oxide layers 202-2, 204-2, and 206-2have respective different thicknesses, as mentioned above. For example,the oxide layer 202-2 has a thickness t₁; the oxide layer 204-2 has athickness t₂; the oxide layer 206-2 has a thickness t₃, whereint₁<t₂<t₃. Further, in some embodiments, a thickest thickness of an oxidelayer of one of the plurality of MOS capacitors may not exceed 5 nm. Insome embodiments, when the MOS capacitors 202, 204, and 206 are under asame bias voltage (e.g., a positive bias voltage), the oxide layer 202-2may present an SBD behavior at temperature T₁ (breakdown temperatureT₁); the oxide layer 204-2 may present an SBD behavior at temperature T₂(breakdown temperature T₂); and the oxide layer 206-2 may present an SBDbehavior at temperature T₃ (breakdown temperature T₃), wherein T₁>T₂>T₃.That is, the thicker oxide layer (e.g., the oxide layer 206-2) maypresent the respective SBD behavior at a lower temperature (e.g., thebreakdown temperature T₃) when compared to relative thinner oxidelayer(s).

In an embodiment, each of the semiconductor substrates 202-3, 204-3, and206-3 may include a p-type doped silicon material. As such, thecorresponding oxide layers 202-2, 204-2, and 206-2 may presentrespective SBD behaviors at respective different breakdown temperaturesunder a same positive bias voltage. For example, the MOS capacitor 202may receive a positive bias voltage at the respective metal contact202-1; the MOS capacitor 204 may receive the same positive bias voltageat the respective metal contact 204-1; and the MOS capacitor 206 mayreceive the same positive bias voltage at the respective metal contact206-1. And when the environmental temperature that thetemperature-sensing device 100 is monitoring becomes larger than orequal to one or more of the breakdown temperatures (e.g., T₁, T₂, T₃,etc.), one or more of the corresponding oxide layers 202-2, 204-2, and206-2 may present respective SBD behaviors to cause changes ofconduction behaviors of the corresponding MOS capacitors 202, 204, and206, which will be discussed in further detail below with respect toFIG. 3.

Referring still to the illustrated embodiment of FIG. 2, the temperatureoutput circuit 104 includes comparators 222, 224, and 226, each of whichis coupled to a corresponding MOS capacitor of the MOS capacitor circuit102, as mentioned above. More specifically, each of comparators 222,224, and 226 has two inputs, one (e.g., a non-inverting input) of whichis coupled to the respective semiconductor substrate of thecorresponding MOS capacitor and the other (e.g., an inverting input) ofwhich is coupled to a current source 228. For example, the comparator222 is coupled to the semiconductor substrate 202-3 at its non-invertinginput and to the current source 228 at its inverting input; thecomparator 224 is coupled to the semiconductor substrate 204-3 at itsnon-inverting input and to the current source 228 at its invertinginput; and the comparator 226 is coupled to the semiconductor substrate206-3 at its non-inverting input and to the current source 228 at itsinverting input. As such, each of the comparators 222, 224, and 226 cancompare signal (e.g., current) levels received at respective inputs tooutput a logic state for the control logic circuit 106, which will bediscussed in further detail below with respect to FIG. 3.

FIG. 3 illustrates a flow chart of an exemplary method 300 to operatethe temperature-sensing device 100, in accordance with variousembodiments. In various embodiments, the operations of the method 300are performed by the respective components illustrated in FIGS. 1-2. Forpurposes of discussion, the following embodiment of the method 300 willbe described in conjunction with FIGS. 1-2. The illustrated embodimentof the method 300 is merely an example. Therefore, it should beunderstood that any of a variety of operations may be omitted,re-sequenced, and/or added while remaining within the scope of thepresent disclosure.

The method 300 starts with operation 302 in which a common voltage isapplied to a plurality of MOS capacitors, in accordance with variousembodiments. Using the illustrated embodiment of FIG. 2 as an example,common voltage 201 is determined and provided by the control logiccircuit 106. The common voltage 201 is received at each MOS capacitor'smetal contact (e.g., 202-1, 204-1, 206-1, etc.). As mentioned above,such a common voltage 201 may vary over time. In some embodiments, thecommon voltage 201 is increased from 0 volt to a positive voltage thatis high enough to cause each of the MOS capacitors 202, 204, and 206 tooperate under a saturation mode.

The term “saturation mode” of a MOS capacitor as used herein refers to acondition that a current flowing through the MOS capacitor (e.g., fromrespective metal contact to semiconductor substrate of the MOScapacitor) may reach a stable value when a high enough positive voltageis applied to the metal contact of the MOS capacitor. In other words,when the MOS capacitor is applied with a positive voltage higher thanthe “high enough” positive voltage, the value of the current may remainsubstantially stable if an environmental temperature is unchanged. Insome other embodiments, when the semiconductor substrates 202-3, 204-3,and 206-3 of the MOS capacitors 202, 204, and 206 include other types ofdoped silicon material (e.g., n-type) and/or other types ofsemiconductor materials, the common voltage 201 may be a negativevoltage.

In some embodiments, referring again to FIG. 2, when the common voltage201 is high enough to cause each of the MOS capacitors 202, 204, and 206to operate under respective saturation modes, a current 203, with asubstantially stable value “203-I₁,” flows from the metal contact 202-1,through the oxide layer 202-2, and to the semiconductor substrate 202-3;a current 205, with a substantially stable value “205-I₁,” flows fromthe metal contact 204-1, through the oxide layer 204-2, and to thesemiconductor substrate 204-3; and a current 207, with a substantiallystable value “207-I₁,” flows from the metal contact 206-1, through theoxide layer 206-2, and to the semiconductor substrate 206-3. It is notedthat before the oxide layers 202-2, 204-2, and 206-2 present any SBDbehaviors, such currents 203, 205, and 207 are each induced by atunneling effect across each oxide layer. Thus, the values 203-I₁,205-I₁, and 207-I₁ may be relatively smaller than respective values ofthe currents 203, 205, and 207 after the oxide layers 202-2, 204-2, and206-2 present SBD behaviors.

The method 300 continues to operation 304 in which the currents flowingthrough the plurality of MOS capacitors are monitored to providerespective logic states, in accordance with various embodiments.Continuing with the same example, the current 203 is monitored by thecomparator 222; the current 205 is monitored by the comparator 224; andthe current 207 is monitored by the comparator 226. More specifically,in some embodiments, the comparator 222 compares the value of thecurrent 203 (e.g., 203-I₁) with a constant value of a current 229provided by the current source 228. When the value of the current 203 islower than the constant value of the current 229, the comparator 222determines an output signal 223 as a logic low (hereinafter “LOW”); andwhen the value of the current 203 is higher than the constant value ofthe current 229, the comparator 222 determines the output signal 223 asa logic high (hereinafter “HIGH”). In some embodiments, the comparators224 and 226 each receives the current 229 as one of respective inputs.Thus, similarly, the comparators 224 and 226 respectively determineoutput signals 225 and 227 as either HIGH or LOW by comparing the valuesof the currents 205 and 207 with the value of 229, respectively.

As mentioned above, the oxide layers 202-2, 204-2, and 206-2 areassociated with respective breakdown temperatures T₁, T₂, and T₃ (due tothe respective different thicknesses across the oxide layers 202-2,204-2, and 206-2). In some embodiments, such breakdown temperatures T₁,T₂, and T₃ may be each used as a temperature “meter” for anenvironmental temperature.

In an example, when the environmental temperature is higher than T₃ butlower than T₁ and T₂, the oxide layer 206-2 breaks down such that aconduction path (different from the tunneling effect mentioned above) isformed in the oxide layer 206-2. That is, the MOS capacitor 206 becomesmore conductive. Accordingly, the current 207, flowing through the MOScapacitor 206, may present a value 207-I₂ that is substantially higherthan 207-I₁ while the values of the current 203, flowing through the MOScapacitor 202, and the current 205, flowing through the MOS capacitor204, may remain substantially unchanged. Further, in some embodiments,the value 207-I₂ may become higher than the value of current 229, whichis kept substantially unchanged, such that the logic state of the outputsignal 227 may flip from LOW to HIGH (since 207-I₂>the value of current229), while the logic states of the output signals 223 and 225 remain atLOW.

In another example, when the environmental temperature is higher than T₃and T₂ but lower than T₁, the oxide layers 206-2 and 204-2 break downsuch that conduction paths (different from the tunneling effectmentioned above) are each formed in the oxide layer 206-2 and 204-2,respectively. That is, the MOS capacitors 206 and 204 both become moreconductive. Similarly, the logic states of the output signals 225 and227 may both flip from LOW to HIGH, while the logic states of the outputsignal 223 remains at LOW.

Yet in another example, when the environmental temperature is higherthan T₃, T₂, T₁, the oxide layers 206-2, 204-2, and 202-2 all break downsuch that conduction paths are each formed in the oxide layer 206-2,204-2, and 202-2, respectively. That is, the MOS capacitors 206, 204,and 202 all become more conductive. Similarly, the logic states of theoutput signals 223, 225, 227 may all flip from LOW to HIGH.

The method 300 continues to operation 306 in which an environmentaltemperature is determined based on the respective logic states, inaccordance with various embodiments. Continuing with the example inwhich the environmental temperature is higher than T₃ but lower than T₁and T₂, only the logic state of the output signal 227 flips to HIGHwhile the logic states of the output signals 223 and 225 remain at LOW.In some embodiments, the control logic circuit 106 periodically receivesthe logic states of the output signals 223, 225, and 227 to determinethe environmental temperature. In this example, the control logiccircuit 106 may determine that the environmental temperature is higherthan T₃ but lower than T₁ and T₂, wherein T₁, T₂, and T₃ are used astemperature meters. Thus, it can be understood that when more MOScapacitors, whose oxide layers each has a respective oxide thickness,are included in the temperature-sensing device 100, more suchtemperature meters can be provided, which may advantageously increasethe temperature-sensing device 100's accuracy and sensitivity to measurethe environmental temperature.

In an embodiment, a temperature-sensing device configured to monitor atemperature is disclosed. The temperature-sensing device includes: afirst capacitor comprising a first oxide layer with a first thickness; asecond capacitor comprising a second oxide layer with a secondthickness, wherein the second thickness of the second oxide layer isdifferent from the first thickness of the first oxide layer; and acontrol logic circuit, coupled to the first and second capacitors, andconfigured to determine whether the monitored temperature is equal to orgreater than a threshold temperature based on whether at least one ofthe first and second oxide layers breaks down

In another embodiment, a temperature-sensing device includes: a firstcapacitor comprising a first oxide layer with a first thickness; asecond capacitor comprising a second oxide layer with a secondthickness, wherein the second thickness is different from the firstthickness causing the first and second oxide layers to have respectivedifferent breakdown temperatures; and a control logic circuit, coupledto the first and second capacitors, and configured to estimate atemperature based on whether the temperature has become not lower thanone of the breakdown temperatures of the first and second oxide layers.

Yet in another embodiment, a method includes: providing a plurality ofcapacitors, wherein each of the plurality of capacitors comprises arespective oxide layer with a respective thickness that is associatedwith a respective breakdown temperature; applying a common voltage tothe plurality of capacitors to cause respective currents to flow throughthe plurality of capacitors; in response to a varying environmentaltemperature, comparing each of the respective currents with a referencecurrent so as to provide a respective logic state based on therespective breakdown temperature; and determining the environmentaltemperature using the respective logic state.

The foregoing outlines features of several embodiments so that thoseordinary skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodimentsintroduced herein. Those skilled in the art should also realize thatsuch equivalent constructions do not depart from the spirit and scope ofthe present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A temperature-sensing device configured tomonitor a temperature, comprising: a first capacitor comprising a firstoxide layer with a first thickness; a second capacitor comprising asecond oxide layer with a second thickness, wherein the second thicknessof the second oxide layer is different from the first thickness of thefirst oxide layer; and a control logic circuit, coupled to the first andsecond capacitors, and configured to determine whether the monitoredtemperature is equal to or greater than a threshold temperature based onwhether at least one of the first and second oxide layers breaks down.2. The device of claim 1, wherein the first and second oxide layers areeach coupled between respective metal contacts and semiconductorsubstrates.
 3. The device of claim 1, further comprising: a firstcomparator circuit, coupled to the first capacitor, and configured tocompare a first current flowing through the first capacitor with areference current; and a second comparator circuit, coupled to thesecond capacitor, and configured to compare a second current flowingthrough the second capacitor with the reference current.
 4. The deviceof claim 3, wherein the first oxide layer is associated with a firstbreakdown temperature when the first capacitor is biased under a firstvoltage, and the second oxide layer is associated with a secondbreakdown temperature when the second capacitor is biased under thefirst voltage.
 5. The device of claim 4, wherein the thresholdtemperature is between the first and second breakdown temperatures. 6.The device of claim 4, wherein when the monitored temperature is higherthan the first breakdown temperature but lower than the second breakdowntemperature, the first oxide layer breaks down and the second oxidelayer does not break down when both the first and second capacitors arebiased under the first voltage, the first thickness of the first oxidelayer being thicker than the second thickness of the second oxide layer.7. The device of claim 6, wherein the first current becomessubstantially higher than the reference current causing the firstcomparator circuit to output a first logic state, and the second currentremains substantially lower than the reference current causing thesecond comparator circuit to output a second logic state logicallyinverted to the first logic state.
 8. The device of claim 7, wherein thecontrol logic circuit uses the first and second logic states todetermine that the monitored temperature is higher than the firstbreakdown temperature but lower than the second breakdown temperature.9. The device of claim 6, wherein when the first and second capacitorsare to be biased under a second voltage substantially lower than thefirst voltage, the first current becomes substantially lower than thereference current and the second current remains substantially lowerthan the reference current.
 10. A temperature-sensing device,comprising: a first capacitor comprising a first oxide layer with afirst thickness; a second capacitor comprising a second oxide layer witha second thickness, wherein the second thickness is different from thefirst thickness causing the first and second oxide layers to haverespective different breakdown temperatures; and a control logiccircuit, coupled to the first and second capacitors, and configured toestimate a temperature based on whether the temperature has become notlower than one of the breakdown temperatures of the first and secondoxide layers.
 11. The device of claim 10, wherein the first and secondoxide layers are each coupled between respective metal contacts andsemiconductor substrates.
 12. The device of claim 10, furthercomprising: a first comparator circuit, coupled to the first capacitor,and configured to compare a first current flowing through the firstcapacitor with a reference current; and a second comparator circuit,coupled to the second capacitor, and configured to compare a secondcurrent flowing through the second capacitor with the reference current.13. The device of claim 12, wherein when the temperature is higher thanthe breakdown temperature of the first oxide layer but lower than thebreakdown temperature of the second oxide layer, the first oxide layerbreaks down and the second oxide layer remains intact when both thefirst and second capacitors are biased under a first voltage.
 14. Thedevice of claim 13, wherein the first thickness of the first oxide layeris thicker than the second thickness of the second oxide layer.
 15. Thedevice of claim 13, wherein the first current becomes substantiallyhigher than the reference current causing the first comparator circuitto output a first logic state, and the second current remainssubstantially lower than the reference current causing the secondcomparator circuit to output a second logic state logically inverted tothe first logic state.
 16. The device of claim 15, wherein the controllogic circuit uses the first and second logic states to determine thatthe monitored temperature is higher than the breakdown temperature ofthe first oxide layer but lower than the breakdown temperature of thesecond oxide layer.
 17. The device of claim 13, wherein when the firstand second capacitors are to be biased under a second voltagesubstantially lower than the first voltage, the first current becomessubstantially lower than the reference current and the second currentremains substantially lower than the reference current.
 18. The deviceof claim 10, further comprising: a third capacitor comprising a thirdoxide layer with a third thickness, wherein the third thickness isdifferent from the first and second thicknesses thereby causing thethird oxide layer to have a different breakdown temperature from therespective breakdown temperatures of the first and second oxide layers.19. The device of claim 18, wherein the control logic circuit is furtherconfigured to monitor the temperature based on whether the temperaturehas become not lower than the breakdown temperatures of the first andsecond oxide layers but lower than the breakdown temperature of thethird oxide layer thereby causing the first and second oxide layers tobreak down.
 20. A method, comprising: providing a plurality ofcapacitors, wherein each of the plurality of capacitors comprises arespective oxide layer with a respective thickness that is associatedwith a respective breakdown temperature; applying a common voltage tothe plurality of capacitors to cause respective currents to flow throughthe plurality of capacitors; in response to a varying environmentaltemperature, comparing each of the respective currents with a referencecurrent so as to provide a respective logic state based on therespective breakdown temperature; and determining the environmentaltemperature using the respective logic state.